ESMT

Serial NOR delivers high‑speed, stable execution performance for the system, and its low‑latency access architecture enables instant boot and continuous, reliable operation.
The product line spans the full capacity range from 1 Mb to 512 Mb and supports both 1.8 V and 3.3 V voltage specifications, meeting diverse power‑consumption and interface requirements.
ESMT offers a KGD (Known‑Good‑Die) solution that guarantees high yield and long‑term reliability, giving system designers greater flexibility and security.

Building on DDR, DDR2 adds a 4x prefetch and operates at a low 1.8 V supply. Data rates exceed 400 MHz while power consumption drops significantly.
Integrated auto‑refresh and a low‑power standby mode make DDR2 the mainstream choice for set-top boxes and typical industrial‑control systems, balancing performance with energy efficiency.
The product line offers capacities from 128 Mb up to 1 Gb, supporting a wide range of system specifications and long‑term reliability requirements.

DDR3 employs an 8× prefetch and runs at 1.5 V (or 1.35 V low‑power) with frequencies that can surpass 933 MHz, delivering nearly double the performance of DDR2 while further reducing power draw.
Its high bandwidth, on‑chip self‑calibration, and data‑masking features enable outstanding performance in embedded systems, network peripherals, and low-end personal computers platforms.
Available capacities range from 512 Mb to 8Gb, and the devices are compatible with many SoCs and motherboards, providing a solid foundation for high‑performance, energy‑saving designs.

LPDDR4 is the latest low‑power memory generation, operating at an ultra‑low 1.2 V with a 16x prefetch and Bank‑Group architecture that reaches data rates up to 2133 MHz while markedly lowering unit power consumption.
Integrated data registers enhance system stability. Target applications include 5G smartphones, automotive infotainment, AI edge devices, and high‑performance servers.
ESMT product line provides 4 Gb and 8 Gb options, offering flexible design and long‑term reliability for the most demanding performance‑and‑efficiency workloads.

Parallel NAND is designed for high‑throughput applications, using a multi‑channel parallel‑access architecture that significantly increases read and write speeds.
It delivers a reliable, efficient storage solution for large‑capacity use cases.

Targeting data‑storage needs, Serial NAND delivers high‑speed serial transfer and low‑power operation. Its built‑in ECC error‑correction provides long‑term, secure data protection even during rapid writes.
Its compact WSON 6 × 8 mm package dramatically reduces PCB area, making circuit designs simpler and more cost‑effective.

eMMC (embedded MultiMediaCard) packages NAND Flash and a controller into a single BGA chip. It offers the advantages of small size, low power consumption, and simplified system design.
ESMT provides densities ranging from 4 GB to 64 GB.