ESMT

ESMT Parallel NOR is suited for embedded and legacy platforms. Its parallel data paths and stable write performance enable instant loading and long‑term reliable system operation.
It remains compatible with older hardware and software interfaces, offering the optimal solution for traditional platforms that are no longer supported by other memory vendors.

Serial NOR delivers high‑speed, stable execution performance for the system, and its low‑latency access architecture enables instant boot and continuous, reliable operation.
The product line spans the full capacity range from 1 Mb to 512 Mb and supports both 1.8 V and 3.3 V voltage specifications, meeting diverse power‑consumption and interface requirements.
ESMT offers a KGD (Known‑Good‑Die) solution that guarantees high yield and long‑term reliability, giving system designers greater flexibility and security.

SDRAM is a type of synchronous dynamic random access memory that operates in synchronization with the system clock, delivering stable and high-efficiency data access performance. With support for burst mode transfers and a multi-bank architecture, SDRAM effectively enhances data transfer speeds and is well suited for a wide range of embedded systems and industrial applications.
ESMT provides a complete range of SDRAM memory solutions, with capacities ranging from 16 Mb to 512 Mb.

DDR transfers data on both the rising and falling edges of the clock, delivering roughly twice the bandwidth of single‑edge SDRAM.
Each access fetches a full 32‑bit word, and a multi‑bank architecture with automatic refresh enhances data integrity and stability. This enables sustained high‑performance output in industrial‑control and embedded platforms.
Capacity options span 64 Mb to 512 Mb, and the devices are compatible with all major controllers and platforms, making them ideal for applications that require high bandwidth and reliable operation.

Building on DDR, DDR2 adds a 4x prefetch and operates at a low 1.8 V supply. Data rates exceed 400 MHz while power consumption drops significantly.
Integrated auto‑refresh and a low‑power standby mode make DDR2 the mainstream choice for set-top boxes and typical industrial‑control systems, balancing performance with energy efficiency.
The product line offers capacities from 128 Mb up to 1 Gb, supporting a wide range of system specifications and long‑term reliability requirements.

DDR3 employs an 8× prefetch and runs at 1.5 V (or 1.35 V low‑power) with frequencies that can surpass 933 MHz, delivering nearly double the performance of DDR2 while further reducing power draw.
Its high bandwidth, on‑chip self‑calibration, and data‑masking features enable outstanding performance in embedded systems, network peripherals, and low-end personal computers platforms.
Available capacities range from 512 Mb to 8Gb, and the devices are compatible with many SoCs and motherboards, providing a solid foundation for high‑performance, energy‑saving designs.

Parallel NAND is designed for high‑throughput applications, using a multi‑channel parallel‑access architecture that significantly increases read and write speeds.
It delivers a reliable, efficient storage solution for large‑capacity use cases.