ESMT

Serial NOR delivers high‑speed, stable execution performance for the system, and its low‑latency access architecture enables instant boot and continuous, reliable operation.
The product line spans the full capacity range from 1 Mb to 512 Mb and supports both 1.8 V and 3.3 V voltage specifications, meeting diverse power‑consumption and interface requirements.
ESMT offers a KGD (Known‑Good‑Die) solution that guarantees high yield and long‑term reliability, giving system designers greater flexibility and security.

DDR3 employs an 8× prefetch and runs at 1.5 V (or 1.35 V low‑power) with frequencies that can surpass 933 MHz, delivering nearly double the performance of DDR2 while further reducing power draw.
Its high bandwidth, on‑chip self‑calibration, and data‑masking features enable outstanding performance in embedded systems, network peripherals, and low-end personal computers platforms.
Available capacities range from 512 Mb to 8Gb, and the devices are compatible with many SoCs and motherboards, providing a solid foundation for high‑performance, energy‑saving designs.

Parallel NAND is designed for high‑throughput applications, using a multi‑channel parallel‑access architecture that significantly increases read and write speeds.
It delivers a reliable, efficient storage solution for large‑capacity use cases.

Targeting data‑storage needs, Serial NAND delivers high‑speed serial transfer and low‑power operation. Its built‑in ECC error‑correction provides long‑term, secure data protection even during rapid writes.
Its compact WSON 6 × 8 mm package dramatically reduces PCB area, making circuit designs simpler and more cost‑effective.

BRM 系列低功耗無線傳輸模組專為物聯網應用設計，可簡化您產品上的射頻（RF）設計與調校，減少生產綜合成本，大幅降低開發門檻並加速產品上市。此系列包含多個型號，且各型號支援不同頻段與輸出功率，為物聯網場域的多變需求均提供對應方案。

ESMT已通過法國SIGFOX認證的SOC及適⽤於各區域的模組產品。