Gate Driver

Specifications

EHB0610

Density

P+N MOS

Package

SOP-16

Architecture

P+N MOS

Vin min (V)

8

Vin max (V)

36

Max source current (Iosc)(A)

0.1

Max sink current (Iosi)(A)

0.1

Adjustable dead-time

150ns

Dedicated Fault pin output

N

Sleep mode

N

Vin UVLO(V)

1.8

Protection Type

Prevent shoot-through, Undervoltage lockout

Operating Temperature

-40°C to 105°C

Documents

NO.

File Name

Download

Document

ESMT-EHB0610_Datasheet

Datasheet

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